| 摘要 |
Techniques are disclosed for a non-planar semiconductor device, a silicon substrate, a silicon germanium barrier layer formed over the silicon substrate, a germanium quantum well layer formed over the silicon germanium barrier layer. In particular, a portion of the germanium quantum well layer comprises a germanium fin structure having a top surface and laterally opposite sidewall surfaces, a top barrier is formed on at least a portion of the germanium fin structure, wherein the top barrier covers the top surface and sidewall surfaces of the germanium fin structure, a gate electrode layer is formed across the fin structure, and a gate dielectric layer is formed between the top barrier and the gate electrode layer. |
