发明名称 |
LIGHT EMITTING DIODE WITH POLARIZATION CONTROL |
摘要 |
An improved light emitting heterostructure is provided. The heterostructure includes an active region having a set of barrier layers and a set of quantum wells, each of which is adjoined by a barrier layer. The quantum wells have a delta doped p-type sub-layer located therein, which results in a change of the band structure of the quantum well. The change can reduce the effects of polarization in the quantum wells, which can provide improved light emission from the active region. |
申请公布号 |
KR20140037058(A) |
申请公布日期 |
2014.03.26 |
申请号 |
KR20137025240 |
申请日期 |
2012.02.25 |
申请人 |
SENSOR ELECTRONIC TECHNOLOGY, INC. |
发明人 |
SHUR MICHAEL;GASKA REMIGIJUS |
分类号 |
H01L33/04;H01L33/06 |
主分类号 |
H01L33/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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