| 发明名称 |
Semiconductor device and method for making same |
| 摘要 |
A semiconductor device including a substrate having at least one nitride material lined isolation cavity; and a hafnium containing dielectric fill at least partially contained in and at least partially covering at least a portion of the at least one nitride lined isolation cavity. |
| 申请公布号 |
US8680644(B2) |
申请公布日期 |
2014.03.25 |
| 申请号 |
US201113083879 |
申请日期 |
2011.04.11 |
| 申请人 |
CHENG KANGGUO;DORIS BRUCE B.;YAMASHITA TENKO;ZHANG YING;INTERNATIONAL BUSINESS MACHINES COROPORATION |
发明人 |
CHENG KANGGUO;DORIS BRUCE B.;YAMASHITA TENKO;ZHANG YING |
| 分类号 |
H01L21/762 |
主分类号 |
H01L21/762 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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