发明名称 |
System for self-aligned contacts |
摘要 |
A system for forming self-aligned contacts includes electroplating a first metal contact onto a Group III-V semiconductor substrate, the first metal contact having a greater height than width and having a straight sidewall profile, etching back the semiconductor substrate down to a base layer to expose an emitter semiconductor layer under the first metal contact, conformally depositing a dielectric layer on a vertical side of the first metal contact, a vertical side of the emitter semiconductor layer and on the base layer, anisotropically etching the dielectric layer off of the semiconductor substrate to form a dielectric sidewall spacer on the vertical side of the first metal contact and providing a second metal contact immediately adjacent the dielectric sidewall spacer. |
申请公布号 |
US8679969(B2) |
申请公布日期 |
2014.03.25 |
申请号 |
US201113196733 |
申请日期 |
2011.08.02 |
申请人 |
URTEAGA MIGUEL;PIERSON, JR. RICHARD L.;SHINOHARA KEISUKE;TELEDYNE SCIENTIFIC & IMAGING, LLC |
发明人 |
URTEAGA MIGUEL;PIERSON, JR. RICHARD L.;SHINOHARA KEISUKE |
分类号 |
H01L21/44;H01L21/02 |
主分类号 |
H01L21/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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