发明名称 Surface acoustic wave device
摘要 A surface acoustic wave device includes a piezoelectric substrate made of lithium niobate and including grooves in a surface thereof. Each groove includes a finger of an IDT electrode made of copper. The IDT electrode includes a first electrode layer embedded in the grooves and a second electrode layer sticking out of the surface of the piezoelectric substrate. A normalized electrode thickness of the first electrode layer is about 1.0% to about 12.0% inclusive, and the normalized electrode thickness of the second electrode layer is about 1.0% to about 9.0% inclusive. The normalized electrode thickness of the entire IDT electrode is about 6.0% to about 13.0% inclusive.
申请公布号 US8680744(B2) 申请公布日期 2014.03.25
申请号 US201313944906 申请日期 2013.07.18
申请人 MURATA MANUFACTURING CO., LTD. 发明人 KIMURA TETSUYA;KADOTA MICHIO
分类号 H01L41/08 主分类号 H01L41/08
代理机构 代理人
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