| 发明名称 |
Epitaxial structure and method for making the same |
| 摘要 |
A method for making an epitaxial structure includes: (a) providing a sacrificial layer on a temporary substrate, the sacrificial layer being made of gallium oxide; and (b) growing epitaxially an epitaxial layer unit over the sacrificial layer. |
| 申请公布号 |
US8680554(B2) |
申请公布日期 |
2014.03.25 |
| 申请号 |
US201113331530 |
申请日期 |
2011.12.20 |
| 申请人 |
WUU DONG-SING;HORNG RAY-HUA;TSAI TSUNG-YEN;NATIONAL CHUNG-HSING UNIVERSITY |
发明人 |
WUU DONG-SING;HORNG RAY-HUA;TSAI TSUNG-YEN |
| 分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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