发明名称 |
Method of forming a chalcogenide material and methods of forming a resistive random access memory device including a chalcogenide material |
摘要 |
A method of forming a chalcogenide material on a surface of a substrate comprising exposing a surface of a substrate to ionized gas clusters from a source gas, the ionized gas clusters comprising at least one chalcogen and at least one electropositive element. A method of forming a resistive random access memory device is also disclosed. The method comprises forming a plurality of memory cells wherein each cell of the plurality of memory cells is formed by forming a metal on a first electrode, forming a chalcogenide material on the metal by a gas cluster ion beam process, and forming a second electrode on the chalcogenide material. A method of forming another resistive random access memory device and a random access memory device including the chalcogenide material are also disclosed. |
申请公布号 |
US8679914(B2) |
申请公布日期 |
2014.03.25 |
申请号 |
US20100917930 |
申请日期 |
2010.11.02 |
申请人 |
QUICK TIMOTHY A.;MICRON TECHNOLOGY, INC. |
发明人 |
QUICK TIMOTHY A. |
分类号 |
H01L21/336;H01L21/00;H01L21/425 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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