发明名称 |
Method for manufacturing silicon thin-film solar cells |
摘要 |
The present invention relates to a method for manufacturing silicon thin-film solar cells, including: providing a substrate; forming a first electrode on the substrate; forming a first doped semiconductor layer on the first electrode by chemical vapor deposition; forming an intrinsic layer on the first doped semiconductor layer by chemical vapor deposition, where the intrinsic layer includes a plurality of amorphous/nanocrystalline silicon layers, and the intrinsic layer has various energy bandgaps formed by varying average grain sizes of the amorphous/nanocrystalline silicon layers; forming a second doped semiconductor layer on the intrinsic layer by chemical vapor deposition, where one of the first doped semiconductor layer and the second doped semiconductor layer is a p-type amorphous silicon layer and the other is an n-type amorphous/nano-microcrystalline silicon layer; and forming a second electrode on the second doped semiconductor layer. Accordingly, the present invention can achieve broadband absorption in a single junction structure. |
申请公布号 |
US8679892(B2) |
申请公布日期 |
2014.03.25 |
申请号 |
US201213343373 |
申请日期 |
2012.01.04 |
申请人 |
LI TOMI T.;CHANG JENG-YANG;CHEN SHENG-HUI;LEE CHENG-CHUNG;NATIONAL CENTRAL UNIVERSITY |
发明人 |
LI TOMI T.;CHANG JENG-YANG;CHEN SHENG-HUI;LEE CHENG-CHUNG |
分类号 |
H01L21/00;H01L31/0376;H01L31/0384 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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