发明名称 |
Thin film transistor and display device using the same and method for manufacturing the same |
摘要 |
A thin film transistor according to an example embodiment includes: a substrate body; a semiconductor layer formed on the substrate body and comprising a polycrystalline silicon film having a surface resistance from about 2000 ohm/sq to about 8000 ohm/sq; and a source electrode and a drain electrode each contacted with the semiconductor layer and comprising a metallic material having a resistance from about 350 to about 2000 ohm. |
申请公布号 |
US8680531(B2) |
申请公布日期 |
2014.03.25 |
申请号 |
US201113115883 |
申请日期 |
2011.05.25 |
申请人 |
LEE JAE-SEOB;PARK YONG-HWAN;PYO YOUNG-SHIN;SAMSUNG DISPLAY CO., LTD. |
发明人 |
LEE JAE-SEOB;PARK YONG-HWAN;PYO YOUNG-SHIN |
分类号 |
H01L27/14 |
主分类号 |
H01L27/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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