发明名称 Tunable two-mirror interference lithography system
摘要 A two-beam interference lithography system offers large-area nanopatterning with tunability of pattern periodicities. The tunable feature is achieved by placing two rotatable mirrors in the two expanded beam paths which can conveniently be regulated for the designed pattern periodicities. While the effective interference pattern coverage is mainly determined by the optical coherence length and mirror size, the minimum pattern coverage area is as large as the effective coherence length of the laser and the selected mirror size over a wide range of periodicities.
申请公布号 US8681315(B2) 申请公布日期 2014.03.25
申请号 US201213547824 申请日期 2012.07.12
申请人 MAO WEIDONG;WATHUTHANTHRI ISHAN;CHOI CHANG-HWAN;THE TRUSTEES OF THE STEVENS INSTITUTE OF TECHNOLOGY 发明人 MAO WEIDONG;WATHUTHANTHRI ISHAN;CHOI CHANG-HWAN
分类号 G02B7/198 主分类号 G02B7/198
代理机构 代理人
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