发明名称 |
Methods of fabricating a semiconductor device having metallic storage nodes |
摘要 |
The present disclosure describes methods of fabricating a semiconductor device. An exemplary method includes forming a metal pattern on a substrate and etching the metal pattern using an etchant including at least an alkaline solution and an oxidant to form a metal electrode, where at least a portion of the surface of the metal electrode is uneven. |
申请公布号 |
US8679935(B2) |
申请公布日期 |
2014.03.25 |
申请号 |
US201113303500 |
申请日期 |
2011.11.23 |
申请人 |
LEE MONGSUP;HWANG INSEAK;GWAK BYOUNG-YONG;CHOI SUKHUN;LEE SANG-JUN;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE MONGSUP;HWANG INSEAK;GWAK BYOUNG-YONG;CHOI SUKHUN;LEE SANG-JUN |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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