POLYMER FOR RESIST AND RESIST COMPOSITION COMPRISING THE SAME

摘要

The present invention provides a polymer for resist of Chemical Formula 1 as below and a resist composition comprising the same, wherein the polymer is useful for forming resist patterns having improved margin and resolution and low line width roughness (LWR) by enhancing solubility with respect to an organic developer when forming patterns using lithography, in particular, patterns by a NTD method, as well as has excellent contrast enhancing effects. (In the Chemical Formula 1, R_1-R_4, and a and b are respectively the same as defined in the specification.)