The present invention relates to a method for wafer level bonding wherein the method comprises the step of forming a first metal layer on a first wafer; the step of forming a second metal layer on a second wafer; the step of bonding the first wafer with the second wafer for the first metal layer to face solder foil with the solder foil arranged on the second metal layer.
申请公布号
KR101376903(B1)
申请公布日期
2014.03.25
申请号
KR20130007591
申请日期
2013.01.23
申请人
KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY