发明名称 Method of controlling ion implantation apparatus
摘要 Provided is a method of controlling an ion implantation apparatus 100 which includes: a mass separator 3 for sorting out and outputting ions having a specific mass number and valence from an ion beam IB extracted from an ion source 2; an acceleration tube 4 for accelerating or decelerating the ion beam IB output from the mass separator 3; and an energy separator 5 for sorting out and outputting ions having a specific energy from the ion beam IB output from the acceleration tube 4. The method comprises, during an acceleration mode, controlling an acceleration voltage VA such that it is prevented from becoming 0 kV.
申请公布号 US8680491(B2) 申请公布日期 2014.03.25
申请号 US201213409984 申请日期 2012.03.01
申请人 TANJO MASAYASU;NISSIN ION EQUIPMENT CO., LTD 发明人 TANJO MASAYASU
分类号 H01J37/00 主分类号 H01J37/00
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