发明名称 |
Semiconductor memory integrated device having a precharge circuit with thin-film transistors gated by a voltage higher than a power supply voltage |
摘要 |
Provided is a semiconductor integrated device including a semiconductor memory circuit and a peripheral circuit of the semiconductor memory circuit. The peripheral circuit includes a first transistor having a first voltage as a breakdown voltage of a gate oxide film. The semiconductor memory circuit includes a pair of bit lines, one of the pair of bit lines being connected to a gate transistor of a memory cell, and a precharge circuit that includes a transistor having a breakdown voltage substantially equal to that of the first transistor, and precharges the pair of bit lines to a predetermined voltage in response to an activation signal. The activation signal of the precharge circuit is a second voltage higher than the first voltage. |
申请公布号 |
US8681577(B2) |
申请公布日期 |
2014.03.25 |
申请号 |
US201313918425 |
申请日期 |
2013.06.14 |
申请人 |
RENESAS ELECTRONICS CORPORATION |
发明人 |
TAKAHASHI HIROYUKI;FUKUSHI TETSUO |
分类号 |
G11C7/12 |
主分类号 |
G11C7/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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