发明名称 |
Non-volatile semiconductor memory device |
摘要 |
A non-volatile semiconductor memory device according to an embodiment includes: a p-type semiconductor substrate; a p-type first p well which is formed in the semiconductor substrate and in which a bit line connecting transistor configured to connect a bit line of a memory cell and a sense amplifier unit is formed; and an n-type first N well which surrounds the first P well and which is configured to electrically isolate the first P well from the semiconductor substrate. |
申请公布号 |
US8681556(B2) |
申请公布日期 |
2014.03.25 |
申请号 |
US201213425704 |
申请日期 |
2012.03.21 |
申请人 |
KUTSUKAKE HIROYUKI;SUGIMAE KIKUKO;KABUSHIKI KAISHA TOSHIBA |
发明人 |
KUTSUKAKE HIROYUKI;SUGIMAE KIKUKO |
分类号 |
G11C11/34 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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