发明名称 |
One-bit memory cell for nonvolatile memory and associated controlling method |
摘要 |
A one-bit memory cell for a nonvolatile memory includes a bit line and a plurality of serially-connected storage units. The bit line is connected to the serially-connected storage units. Each storage unit includes a first doped region, a second doped region and a third doped region, which are formed in a surface of a substrate. A first gate structure is disposed over a first channel region between the first doped region and the second doped region. The first gate structure is connected to a control signal line. A second gate structure is disposed over a second channel region between the second doped region and the third doped region. The second gate structure is connected to an anti-fuse signal line. |
申请公布号 |
US8681528(B2) |
申请公布日期 |
2014.03.25 |
申请号 |
US201213590392 |
申请日期 |
2012.08.21 |
申请人 |
WU MENG-YI;WEN YUEH-CHIA;CHEN HSIN-MING;YANG CHING-SUNG;EMEMORY TECHNOLOGY INC. |
发明人 |
WU MENG-YI;WEN YUEH-CHIA;CHEN HSIN-MING;YANG CHING-SUNG |
分类号 |
G11C17/00 |
主分类号 |
G11C17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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