发明名称 High aspect ratio capacitively coupled MEMS devices
摘要 A method that includes forming an opening between at least one first electrode and a second electrode by forming a recess in a first electrode layer, the recess having sidewalls that correspond to a surface of the at least one first electrode, forming a first sacrificial layer on the sidewalls of the recess, the first sacrificial layer having a first width that corresponds to a second width of the opening, forming a second electrode layer in the recess that corresponds to the second electrode, and removing the first sacrificial layer to form the opening between the second electrode and the at least one first electrode.
申请公布号 US8680631(B2) 申请公布日期 2014.03.25
申请号 US201313862208 申请日期 2013.04.12
申请人 STMICROELECTRONICS, INC. 发明人 MOHANAKRISHNASWAMY VENKATESH;NGUYEN LOI N.
分类号 H01L29/84 主分类号 H01L29/84
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