发明名称 |
Field effect transistor and schottky diode structures |
摘要 |
In accordance with an embodiment a structure can include a monolithically integrated trench field-effect transistor (FET) and Schottky diode. The structure can include a first gate trench extending into a semiconductor region, a second gate trench extending into the semiconductor region, and a source region flanking a side of the first gate trench. The source region can have a substantially triangular shape, and a contact opening extending into the semiconductor region between the first gate trench and the second gate trench. The structure can include a conductor layer disposed in the contact opening to electrically contact the source region along at least a portion of a slanted sidewall of the source region, and the semiconductor region along a bottom portion of the contact opening. The conductor layer can form a Schottky contact with the semiconductor region. |
申请公布号 |
US8680611(B2) |
申请公布日期 |
2014.03.25 |
申请号 |
US201213600184 |
申请日期 |
2012.08.30 |
申请人 |
KOCON CHRISTOPHER BOGUSLAW;SAPP STEVEN;THORUP PAUL;PROBST DEAN;HERRICK ROBERT;LOSEE BECKY;YILMAZ HAMZA;REXER CHRISTOPHER LAWRENCE;CALAFUT DANIEL;FAIRCHILD SEMICONDUCTOR CORPORATION |
发明人 |
KOCON CHRISTOPHER BOGUSLAW;SAPP STEVEN;THORUP PAUL;PROBST DEAN;HERRICK ROBERT;LOSEE BECKY;YILMAZ HAMZA;REXER CHRISTOPHER LAWRENCE;CALAFUT DANIEL |
分类号 |
H01L29/76 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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