发明名称 |
Strain engineered composite semiconductor substrates and methods of forming same |
摘要 |
Composite substrates are produced that include a strained III-nitride material seed layer on a support substrate. Methods of producing the composite substrate include developing a desired lattice strain in the III-nitride material to produce a lattice parameter substantially matching a lattice parameter of a device structure to be formed on the composite substrate. The III-nitride material may be formed with a Ga polarity or an N polarity. The desired lattice strain may be developed by forming a buffer layer between the III-nitride material and a growth substrate, implanting a dopant in the III-nitride material to modify its lattice parameter, or forming the III-nitride material with a coefficient of thermal expansion (CTE) on a growth substrate with a different CTE. |
申请公布号 |
US8679942(B2) |
申请公布日期 |
2014.03.25 |
申请号 |
US20090610065 |
申请日期 |
2009.10.30 |
申请人 |
LETERTRE FABRICE;BETHOUX JEAN-MARC;BOUSSAGOL ALICE;SOITEC |
发明人 |
LETERTRE FABRICE;BETHOUX JEAN-MARC;BOUSSAGOL ALICE |
分类号 |
H01L29/20 |
主分类号 |
H01L29/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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