Thin-film transistor array manufacturing method, thin-film transistor array, and display device

摘要

A method of manufacturing a thin-film transistor array includes: forming a gate insulating layer on gate electrodes; forming an amorphous silicon layer on the gate insulating layer; generating a crystalline silicon layer by crystallizing the amorphous silicon layer; and forming source electrodes and drain electrodes. The thicknesses of the gate insulating layer on the gate electrode is within a range in which there is a positive correlation between light absorbances of the amorphous silicon layer above the gate electrodes for the laser light and equivalent oxide thicknesses of the gate insulating layer on the gate electrodes. The thicknesses of the amorphous silicon layer above the gate electrodes is within a range in which variation of the light absorbances according to variation of the thicknesses of the amorphous silicon layer is within a predetermined range from a first standard.