发明名称 |
Bilayer gate dielectric with low equivalent oxide thickness for graphene devices |
摘要 |
A silicon nitride layer is provided on an uppermost surface of a graphene layer and then a hafnium dioxide layer is provided on an uppermost surface of the silicon nitride layer. The silicon nitride layer acts as a wetting agent for the hafnium dioxide layer and thus prevents the formation of discontinuous columns of hafnium dioxide atop the graphene layer. The silicon nitride layer and the hafnium dioxide layer, which collectively form a low EOT bilayer gate dielectric, exhibit continuous morphology atop the graphene layer. |
申请公布号 |
US8680511(B2) |
申请公布日期 |
2014.03.25 |
申请号 |
US201213369901 |
申请日期 |
2012.02.09 |
申请人 |
DIMITRAKOPOULOS CHRISTOS D.;FARMER DAMON B.;GRILL ALFRED;LIN YU-MING;NEUMAYER DEBORAH A.;PFEIFFER DIRK;ZHU WENJUAN;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DIMITRAKOPOULOS CHRISTOS D.;FARMER DAMON B.;GRILL ALFRED;LIN YU-MING;NEUMAYER DEBORAH A.;PFEIFFER DIRK;ZHU WENJUAN |
分类号 |
H01L29/06 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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