| 摘要 |
A semiconductor device includes substrate including a first and second conductive layers formed on a first and second surfaces of the substrate. A plurality of wire studs or stud bumps are formed on the substrate. A semiconductor die is installed on the substrate between the wire studs. A sealing member is deposited around the die. A first interconnection structure is formed on the semiconductor die and the first sealing member. A second sealing member is deposited on the substrate, the die, and the first interconnection structure. The second sealing member is formed on a side of the substrate and part of the die. Part of the second sealing member is removed to expose the first interconnection structure and the substrate. A second interconnection structure is formed on the first interconnection structure and the second sealing member and the wire studs are electrically connected. An individual semiconductor device is formed on the interconnection structure. |
