SEMICONDUCTOR LIGHT EMITTING DEVICE WITH IMPROVED EMITTING EFFICIENCY

摘要

A semiconductor light-emitting device is disclosed. The semiconductor light-emitting device includes an n-type semiconductor layer; a p-type semiconductor layer; an active layer located between the n-type semiconductor layer and the p-type semiconductor layer; an electron blocking layer located between the active layer and the p-type semiconductor layer; an n-type electrode electrically connected to the n-type semiconductor layer; and a first p-type active electrode and a second p-type active electrode located on the p-type semiconductor layer, wherein the first p-type active electrode and the second p-type active electrode are spaced apart from each other and electrically connected to the p-type semiconductor layer, and the active electrodes have various shapes. Thus, since the number of holes injected into the active layer of the semiconductor light-emitting device increases, it is possible to improve light emission efficiency.