| 摘要 |
The objective of the present invention is to provide a silicon carbide semiconductor device capable of securing sufficient pressure resistance by injecting a small number of ion. The silicon carbide semiconductor device includes: a silicon carbide drift layer (1) which is formed on a silicon carbide substrate (10); a P-type region (2) which is formed on the surface layer of the silicon carbide drift layer (1); and a Schottky electrode (3) which is formed on the silicon carbide drift layer (1) according to the formation point of the P-type region (2). Also, the P-type region is formed by arranging a plurality of unit cells (20) which are a repetition unit of P-type impurities distribution. Furthermore, each unit cell (20) includes at least: a first distribution region (20A) in which P-type impurities are distributed with a first density; and a second distribution region (20B) in which P-type impurities are distributed with a second density higher than the first density. |
