| 摘要 |
The present invention provides a semiconductor device capable of realizing high operation and high response by improving the on property of a transistor. Also, a semiconductor device which has a stable electrical property and high reliability is fabricated. It is a semiconductor device which include a first oxide layer, an oxide semiconductor layer on the first oxide layer, a source electrode layer and a drain electrode layer which touch the oxide semiconductor layer, a second oxide layer on the oxide semiconductor layer, a gate insulating layer on the second oxide layer, a gate electrode layer on the gate insulating layer, and a transistor where the end part of the second oxide layer and the end part of the gate insulating layer are overlapped with the source electrode layer and the drain electrode layer. |
