| 摘要 |
<p>Disclosed are a nitride semiconductor device and a method for manufacturing same for obtaining a high-luminance semiconductor device at a low cost by horizontally growing a nitride on a silicon (Si) substrate exposed between mask patterns. A light-emitting device manufacturing method according to an embodiment of the present invention includes the steps of: forming mask patterns having a width of 20-300μm on a silicon substrate; forming a light-emitting structure including a first nitride semiconductor layer, an active layer and a second nitride semiconductor layer by horizontally growing the nitride on the silicon substrate exposed between the mask patterns; forming a trench in a light-emitting structure region between the mask patterns by etching at least the second nitride semiconductor layer and the active layer; attaching a bonding substrate to a surface of the light-emitting structure in which the trench is formed; and removing the silicon substrate and the mask patterns.</p> |
