| 摘要 |
Disclosed are a light emitting diode and a method for fabricating the same. The light emitting diode includes: a substrate; a first conductive semiconductor layer located on the substrate; a second conductive semiconductor layer located on the first conductive semiconductor layer; an activating layer located between the first conductive semiconductor layer and the second conductive semiconductor layer; and a first electrode located on a lower part of the substrate. The first electrode is electrically connected to the first conductive semiconductor layer throughout the substrate. Because the first electrode is placed on the lower side of the substrate instead of removing the substrate completely and the first electrode is connected to the first conductive semiconductor layer through the substrate, damages of an epitaxy layer or planarization caused by the separation of the substrate can be resolved. |
