METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND RECORDING MEDIUM

摘要

The present invention forms a thin film including preset element like a silicon layer in a low temperature region. The thin film consisting of a preset element group is formed on a substrate by performing preset time a cycle that includes a process of supplying a first raw material including preset element and halogen radical to a substrate; and a process of supplying a second raw material which includes preset element and amino radical, and has the number of ligands including the amino radical in the empirical formula which is less than two, and also is less than the number of ligands including the halogen radical in the empirical formula of the first raw material. [Reference numerals] (AA) Wafer charge; (BB) Boat load; (CC) Pressure adjustment; (DD) Temperature adjustment; (EE) HCDS gas supply; (FF,HH) Remaining gas removal; (GG) SiH_3R gas supply; (II) 1 cycle; (JJ) Step1; (KK) Step2; (LL) Perform a predetermined number of times?; (MM) Purge; (NN) Return to atmospheric pressure; (OO) Boat unload; (PP) Wafer discharge