制造经磊晶涂覆之半导体晶圆之方法,申请号TW098114814-传众专利搜索

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发明名称	制造经磊晶涂覆之半导体晶圆之方法
摘要
申请公布号	TWI431172	申请公布日期	2014.03.21
申请号	TW098114814	申请日期	2009.05.05
申请人	世创电子材料公司德国	发明人	斯查尔　瑞韩德;韩杰　克里斯汀
分类号	C30B25/02;H01L21/20	主分类号	C30B25/02
代理机构		代理人	陈翠华台北市松山区南京东路3段261号6楼
主权项
地址	德国

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