发明名称 |
NORMALLY-OFF GALLIUM NITRIDE TRANSISTOR WITH INSULATING GATE AND METHOD OF MAKING SAME |
摘要 |
<p>A normally-off transistor includes a channel layer, an electron supply layer overlaying the channel layer, a source electrode and a drain electrode on the electron supply layer, an area in the electrode supply layer between the source electrode and the drain electrode treated with a fluoride based plasma followed by a chlorine based plasma treatment, a gate insulator overlaying the area, and a gate electrode overlaying the gate insulator.</p> |
申请公布号 |
WO2013184850(A4) |
申请公布日期 |
2014.03.20 |
申请号 |
WO2013US44383 |
申请日期 |
2013.06.05 |
申请人 |
HRL LABORATORIES, LLC |
发明人 |
CHU, RONGMING;HUGHES, BRIAN;CORRION, ANDREA;BURNHAM, SHAWN D.;BOUTROS, KARIM S. |
分类号 |
H01L29/778;H01L21/335 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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