发明名称 |
OXIDE SEMICONDUCTOR AND METHOD FOR MANUFACTURING SAME |
摘要 |
<p>Provided is an oxide semiconductor capable of inhibiting excessive intrinsic carriers and having high electrical stability. The oxide semiconductor comprises: an AlxInyZnz oxide and a trace amount of dopants; and the trace amount of dopants comprises: a combination of any one or more of rare earth elements, oxides of rare earth elements, Group 4B elements, oxides of Group 4B elements, Group 5B elements or oxides of Group 5B elements.</p> |
申请公布号 |
WO2014040514(A1) |
申请公布日期 |
2014.03.20 |
申请号 |
WO2013CN83031 |
申请日期 |
2013.09.06 |
申请人 |
GUANG ZHOU NEW VISION OPTO-ELECTRONIC TECHNOLOGY CO., LTD |
发明人 |
LAN, LINFENG;XIAO, PENG;PENG, JUNBIAO |
分类号 |
H01L29/24;H01L21/203;H01L29/10;H01L29/786 |
主分类号 |
H01L29/24 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|