| 摘要 |
PROBLEM TO BE SOLVED: To provide a GFZ method.SOLUTION: The present invention relates to a method for producing a silicon single crystal that comprises the steps of: heating a silicon plate by induction heating; melting granular silicon on the silicon plate; supplying the molten silicon to a phase boundary where a crystallization of the single crystal takes place through a flow conduit tube at the center of the plate; heating a silicon ring arranged above the plate having lower resistance than the plate by induction heating prior to the step for heating the plate by induction heating; and melting the ring. |
