Verfahren zur Herstellung einer Halbleitervorrichtung insbesondere einer Kristalldiode oder eines Transistors

摘要

1,165,684. Semi-conductor devices. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. 4 Oct., 1966 [7 Oct., 1965], No. 44232/66. Heading H1K. A semi-conductor device comprises a sealed glass envelope 3 through the wall of which passes a conductor 5, the part of the conductor inside the envelope having an enamel layer 6. The layer is formed by immersing the conductor in a glass suspension, washing the suspension away from the contact-making part of the conductor by dipping it in alcohol, and heating the suspension during the sealing of the conductor into the envelope to convert the suspension into enamel. The conductor may be a coppersheathed nickel-iron wire carrying a thinner, preferably gold, electrode wire which makes point contact or alloyed contact with a germanium body 1.