发明名称 |
Light Emitting Diode (LED) using Three-Dimensional Gallium Nitride (GaN) Pillar Structures |
摘要 |
A method is provided for fabricating a light emitting diode (LED) using three-dimensional gallium nitride (GaN) pillar structures with planar surfaces. The method forms a plurality of GaN pillar structures, each with an n-doped GaN (n-GaN) pillar and planar sidewalls perpendicular to the c-plane, formed in either an m-plane or a-plane family. A multiple quantum well (MQW) layer is formed overlying the n-GaN pillar sidewalls, and a layer of p-doped GaN (p-GaN) is formed overlying the MQW layer. The plurality of GaN pillar structures are deposited on a first substrate, with the n-doped GaN pillar sidewalls aligned parallel to a top surface of the first substrate. A first end of each GaN pillar structure is connected to a first metal layer. The second end of each GaN pillar structure is etched to expose the n-GaN pillar second end and connected to a second metal layer. |
申请公布号 |
US2014077158(A1) |
申请公布日期 |
2014.03.20 |
申请号 |
US201314088374 |
申请日期 |
2013.11.23 |
申请人 |
SHARP LABORATORIES OF AMERICA, INC. |
发明人 |
CROWDER MARK ALBERT;ZHAN CHANGQING;SCHUELE PAUL J. |
分类号 |
H01L33/04;H01L33/00;H01L33/32 |
主分类号 |
H01L33/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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