| 摘要 |
PROBLEM TO BE SOLVED: To perform phase separation of a self-organization material having a large main film thickness with regularity.SOLUTION: According to an embodiment, a pattern formation method comprises the steps of: forming a first self-organization material layer including a first segment and a second segment on a substrate on which a guide layer is provided; forming a first self-organization pattern including a first region including the first segment and a second region including the second segment by performing phase separation of the first self-organization material layer; forming a second self-organization material layer including a third segment and a fourth segment on the first self-organization pattern; and forming a second self-organization pattern including a third region including the third segment and a fourth region including the fourth segment by performing phase separation of the second self-organization material layer. |
