| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a reflective mask in such a manner that, upon forming a part such as a designed residual defect, which is in contact with a part of an original mask pattern and has a smaller size than the original mask pattern, as an absorber pattern of the reflective mask, features of the part in a fine size can be obtained conforming to the designed features compared to a conventional methods.SOLUTION: A pattern to be a part with a desired fine size is formed in a hard mask layer formed on an absorption layer of a reflective mask blank; then a mask pattern partially overlapping the pattern formed in the hard mask layer is formed in a resist layer formed on the hard mask layer; and the absorption layer exposed through the pattern formed in the hard mask layer and through the pattern formed in the resist layer is subjected to dry etching. |
