SEMICONDUCTOR BUFFER STRUCTURE AND SEMICONDUCTOR ELEMENT INCLUDING THE SAME, AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor buffer structure which reduces a dislocation density in a nitride thin film when the nitride thin film grows on a silicon substrate.SOLUTION: A semiconductor buffer structure according to the present embodiment comprises: a plurality of nitride semiconductor layers in which average relative proportions of gallium increases with distance in one direction; and a dislocation control layer formed from AlInGaN (0≤a1≤1, 0≤b1≤1, a1+b1≠1) arranged between adjacent nitride semiconductor layers among the plurality of nitride semiconductor layers. Because of interposition of the dislocation control layer, a location density of the whole of the plurality of nitride semiconductor layers can be decreased.