| 摘要 |
PROBLEM TO BE SOLVED: To improve heat radiation performance of an EA modulator part of an EA modulator integrated laser.SOLUTION: A semiconductor optical element 10 includes: a substrate 22 where an electric field absorption type modulator 24 is formed; a mesa stripe structure 32 which is provided on the substrate 22 and includes an active layer 34 of the electric field absorption type modulator 24; implantation layers 38 formed at both sides of the mesa stripe structure 32; a passivation film 48 provided on the mesa stripe structure 32 and the implantation layers 38; an electrode 42 to which a voltage signal for driving the electric field absorption type modulator 24 is applied; and heat radiators 52 which are electrically separated from the electrode 42. The passivation film 48 has an opening 50. The heat radiators 52 are disposed so as to contact with upper surfaces of the implantation layers 38 and are exposed from the opening 50 of the passivation film 48. |
