发明名称 |
METHOD OF PRODUCING SEMICONDUCTOR EPITAXIAL WAFER, SEMICONDUCTOR EPITAXIAL WAFER, AND METHOD OF PRODUCING SOLID-STATE IMAGE SENSING DEVICE |
摘要 |
The present invention provides a method of more efficiently producing a semiconductor epitaxial wafer, which can suppress metal contamination by achieving higher gettering capability. A method of producing a semiconductor epitaxial wafer 100 according to the present invention includes a first step of irradiating a semiconductor wafer 10 with cluster ions 16 to form a modifying layer 18 formed from a constituent element of the cluster ions 16 in a surface portion 10A of the semiconductor wafer; and a second step of forming an epitaxial layer 20 on the modifying layer 18 of the semiconductor wafer 10. |
申请公布号 |
US2014080247(A1) |
申请公布日期 |
2014.03.20 |
申请号 |
US201214116318 |
申请日期 |
2012.03.19 |
申请人 |
KADONO TAKESHI;KURITA KAZUNARI;SUMCO CORPORATION |
发明人 |
KADONO TAKESHI;KURITA KAZUNARI |
分类号 |
H01L21/02;H01L27/146;H01L29/36 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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