| 摘要 |
According to one embodiment, a semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of the first conductivity type, a third semiconductor region of a second conductivity type, a fourth semiconductor region of the first conductivity type, a fifth semiconductor region of the second conductivity type, a first electrode, a second electrode, and a third electrode. The first electrode is provided together with the first region in a first direction, provided together with the third region in a second direction, and has an end portion of the first region side located nearer to the first semiconductor side than a boundary between the second region and the third region. The second electrode is provided between the first electrode and the first region and is in electrical continuity with the fourth region. The third electrode contacts with the fourth region. |
