发明名称 METHOD OF FORMING HIGH-QUALITY GRAPHENE USING CONTINUOUS HEAT TREATMENT CHEMICAL VAPOR DEPOSITION
摘要 Provided is a method of forming graphene having an increased grain size. In the method, a substrate including a catalyst layer formed of a transition metal is loaded into a chamber and a gaseous carbon source is supplied into the chamber. A continuous heat treatment in which the catalyst layer is locally heated while moving a heated area of the catalyst layer is performed to dissolve a carbon component in the catalyst layer and extract graphene on a surface of the catalyst layer from the dissolved carbon component.
申请公布号 US2014079623(A1) 申请公布日期 2014.03.20
申请号 US201214114689 申请日期 2012.03.15
申请人 KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY 发明人 JEON SEOK-WOO;LEE JIN-SUP;OH SE-RAN
分类号 C01B31/04 主分类号 C01B31/04
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