发明名称 |
METHOD OF FORMING HIGH-QUALITY GRAPHENE USING CONTINUOUS HEAT TREATMENT CHEMICAL VAPOR DEPOSITION |
摘要 |
Provided is a method of forming graphene having an increased grain size. In the method, a substrate including a catalyst layer formed of a transition metal is loaded into a chamber and a gaseous carbon source is supplied into the chamber. A continuous heat treatment in which the catalyst layer is locally heated while moving a heated area of the catalyst layer is performed to dissolve a carbon component in the catalyst layer and extract graphene on a surface of the catalyst layer from the dissolved carbon component. |
申请公布号 |
US2014079623(A1) |
申请公布日期 |
2014.03.20 |
申请号 |
US201214114689 |
申请日期 |
2012.03.15 |
申请人 |
KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY |
发明人 |
JEON SEOK-WOO;LEE JIN-SUP;OH SE-RAN |
分类号 |
C01B31/04 |
主分类号 |
C01B31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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