发明名称 Method for Manufacturing a Semiconductor Structure
摘要 According to an embodiment, a method for manufacturing a semiconductor structure includes providing a first monocrystalline semiconductor portion having a first lattice constant in a reference direction and forming a second monocrystalline semiconductor portion having a second lattice constant in the reference direction, which is different to the first lattice constant, on the first monocrystalline semiconductor portion.
申请公布号 US2014080294(A1) 申请公布日期 2014.03.20
申请号 US201314086144 申请日期 2013.11.21
申请人 INFINEON TECHNOLOGIES AUSTRIA AG 发明人 PLAPPERT MATHIAS;SCHULZE HANS-JOACHIM
分类号 H01L21/02 主分类号 H01L21/02
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