ACTIVE DEVICE FOR THIN-FILM TRANSISTOR

摘要

Provided is an active device for a thin-film transistor, comprising: a gate electrode (40); a gate insulation layer (41) covering the gate electrode (40); an oxide semiconductor layer (42) formed on the gate insulation layer (41); a first protective layer (43) formed on the oxide semiconductor layer (42); a source/drain electrode (44) electrically connected to the oxide semiconductor layer (42), and a second protective layer (45) covering the source/drain electrode (44); wherein at least one of the gate insulation layer (41), the first protective layer (43) and the second protective layer (45) is made of a nitride of silicon and has a refractive index between 2.0 and 3.0. As such, diffusion of metallic ions from a metal electrode can be inhibited and the content of H in the insulation layer and protective layers can be reduced, so as to be able to effectively improve the stability of a TFT process technology.