发明名称 |
PROCESS OF MANUFACTURING MAGNETORESISTIVE ELEMENT |
摘要 |
PROBLEM TO BE SOLVED: To provide a process of manufacturing a magnetoresistive element such as an MRAM using a magnetoresistive effect,the process enabling degradation in the device properties to be suppressed within an allowable range.SOLUTION: The process of manufacturing a magnetoresistive element includes: depositing a first magnetic material film; plasma-etching the first magnetic material film using a mask patterned in advance; and sequentially depositing a barrier layer above the plasma-etched first magnetic material film and a second magnetic material film that sandwiches the barrier layer between the plasma-etched first magnetic material film and the second magnetic material film. |
申请公布号 |
JP2014053438(A) |
申请公布日期 |
2014.03.20 |
申请号 |
JP20120196733 |
申请日期 |
2012.09.07 |
申请人 |
HITACHI HIGH-TECHNOLOGIES CORP |
发明人 |
OGAWA YOSHIFUMI;MATSUMOTO EIJI;IZAWA MASARU;MATSUZAKI NOZOMI;SAKAI SATORU |
分类号 |
H01L43/12;H01L21/8246;H01L27/105;H01L29/82;H01L43/08 |
主分类号 |
H01L43/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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