发明名称 PROCESS OF MANUFACTURING MAGNETORESISTIVE ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a process of manufacturing a magnetoresistive element such as an MRAM using a magnetoresistive effect,the process enabling degradation in the device properties to be suppressed within an allowable range.SOLUTION: The process of manufacturing a magnetoresistive element includes: depositing a first magnetic material film; plasma-etching the first magnetic material film using a mask patterned in advance; and sequentially depositing a barrier layer above the plasma-etched first magnetic material film and a second magnetic material film that sandwiches the barrier layer between the plasma-etched first magnetic material film and the second magnetic material film.
申请公布号 JP2014053438(A) 申请公布日期 2014.03.20
申请号 JP20120196733 申请日期 2012.09.07
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 OGAWA YOSHIFUMI;MATSUMOTO EIJI;IZAWA MASARU;MATSUZAKI NOZOMI;SAKAI SATORU
分类号 H01L43/12;H01L21/8246;H01L27/105;H01L29/82;H01L43/08 主分类号 H01L43/12
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