发明名称 SILICON FILM FORMING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a method for inexpensively and easily forming high-quality silicon film while taking advantage of silicon film formation by a coating method.SOLUTION: A silicon film forming method in which at least the two steps below are conducted in an arbitrary order, includes: a coating film forming step of forming a coating film by coating a coating film forming composition containing a silane compound onto a substrate, and then applying at least one treatment selected from a group consisting of heating treatment and optical treatment to the coating film; and an atmospheric pressure CVD step of bringing gas generated by heating the silane compound into contact with the heated substrate, under atmospheric pressure.
申请公布号 JP2014050805(A) 申请公布日期 2014.03.20
申请号 JP20120197569 申请日期 2012.09.07
申请人 JAPAN ADVANCED INSTITUTE OF SCIENCE & TECHNOLOGY HOKURIKU 发明人 SHIMODA TATSUYA;OHIRA KEISUKE;MASUDA TAKASHI;TAKAGISHI HIDEYUKI;SHIN NAKAE
分类号 B05D7/24;B05D3/10;C23C16/24 主分类号 B05D7/24
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