发明名称 |
SILICON FILM FORMING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a method for inexpensively and easily forming high-quality silicon film while taking advantage of silicon film formation by a coating method.SOLUTION: A silicon film forming method in which at least the two steps below are conducted in an arbitrary order, includes: a coating film forming step of forming a coating film by coating a coating film forming composition containing a silane compound onto a substrate, and then applying at least one treatment selected from a group consisting of heating treatment and optical treatment to the coating film; and an atmospheric pressure CVD step of bringing gas generated by heating the silane compound into contact with the heated substrate, under atmospheric pressure. |
申请公布号 |
JP2014050805(A) |
申请公布日期 |
2014.03.20 |
申请号 |
JP20120197569 |
申请日期 |
2012.09.07 |
申请人 |
JAPAN ADVANCED INSTITUTE OF SCIENCE & TECHNOLOGY HOKURIKU |
发明人 |
SHIMODA TATSUYA;OHIRA KEISUKE;MASUDA TAKASHI;TAKAGISHI HIDEYUKI;SHIN NAKAE |
分类号 |
B05D7/24;B05D3/10;C23C16/24 |
主分类号 |
B05D7/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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