发明名称 |
THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME |
摘要 |
Provided is a thin film transistor. The thin film transistor according to an embodiment of the present invention may include a source electrode and a drain electrode buried in a first flexible substrate, a semiconductor layer disposed on the first flexible substrate to be positioned between the source electrode and the drain electrode, a gate insulating layer completely cover the semiconductor layer, and a gate electrode facing the semiconductor layer on the gate insulating layer. |
申请公布号 |
US2014077297(A1) |
申请公布日期 |
2014.03.20 |
申请号 |
US201313772236 |
申请日期 |
2013.02.20 |
申请人 |
INSTITUTE ELECTRONICS AND TELECOMMUNICATIONS RESEARCH;ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
KOO JAE BON;JUNG SOON-WON;NA BOCK SOON;PARK CHAN WOO;LIM SANG CHUL;OH JI-YOUNG;CHU HYE YONG |
分类号 |
H01L29/786;H01L29/66 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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