发明名称 METHODS FOR SENSING MEMORY ELEMENTS IN SEMICONDUCTOR DEVICES
摘要 A memory device that, in certain embodiments, includes a plurality of memory elements connected to a bit-line and a delta-sigma modulator with a digital output and an analog input, which may be connected to the bit-line. In some embodiments, the delta-sigma modulator includes a circuit with first and second inputs and an output. The circuit is configured to combine (add or subtract) input signals. The first input may be connected to the analog input. The delta-sigma modulator may also include an integrator connected to the output of the circuit, an analog-to-digital converter with an input connected to an output of the integrator and an output connected to the digital output, and a digital-to-analog converter with an input connected to the output of the analog-to-digital converter and an output connected to the second input of the circuit.
申请公布号 US2014078839(A1) 申请公布日期 2014.03.20
申请号 US201314076908 申请日期 2013.11.11
申请人 MICRON TECHNOLOGY INC. 发明人 BAKER R. JACOB
分类号 G11C7/16 主分类号 G11C7/16
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