发明名称 |
THREE-DIMENSIONAL INTEGRATED CIRCUIT DEVICE USING A WAFER SCALE MEMBRANE |
摘要 |
A donor wafer containing integrated semiconductor device. The donor wafer has a donor wafer membrane portion that has a device layer and a buried insulating layer. The donor wafer membrane portion has a number of integrated semiconductor devices where each integrated semiconductor device within the plurality of semiconductor devices corresponds to a die formed on the donor wafer. The donor wafer membrane portion has a diameter of at least 200 mm. The donor wafer has a crystalline substrate that is substantially removed from an area of the donor wafer membrane portion such that the device layer and the buried insulating layer of the donor wafer membrane in the area is configured to conform to a pattern specific topology on an acceptor surface. The donor wafer further has a support structure attached to regions of the donor wafer that are outside of the donor wafer membrane portion. |
申请公布号 |
US2014077330(A1) |
申请公布日期 |
2014.03.20 |
申请号 |
US201314088115 |
申请日期 |
2013.11.22 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
LA TULIPE, JR. DOUGLAS C.;PURUSHOTHAMAN SAMPATH;VICHICONTI JAMES |
分类号 |
H01L29/06 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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