| 摘要 |
PROBLEM TO BE SOLVED: To provide a power module semiconductor device which improves electric conductivity characteristics and thermal conductivity characteristics, can simply change a design, can reduce a manufacturing time, and can improve a manufacturing yield.SOLUTION: A power module semiconductor device includes a metal block constituent unit (21, 21b and Q1) which has a metal substrate 21, a first junction layer 21b arranged on the surface of the metal substrate 21 and a semiconductor device Q1 arranged on the metal substrate 21 through the first junction layer 21b, and a second junction layer 23 arranged on the side face of the metal substrate 21. The plurality of metal block constituent units (21, 21b and Q1) are adjacently arranged on the same plane through the second junction layer 23. |
